IEC 63068-2 Ed. 1.0 en:2019
Original price was: $190.00.$95.00Current price is: $95.00.
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 2: Test method for defects using optical inspection
International Electrotechnical Commission , 01/30/2019
Pages: 25
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
Related products
Original price was: $117.00.$58.00Current price is: $58.00.
Original price was: $41.00.$20.00Current price is: $20.00.
Original price was: $143.00.$71.00Current price is: $71.00.
Original price was: $417.00.$208.00Current price is: $208.00.
Original price was: $58.00.$29.00Current price is: $29.00.
Original price was: $31.00.$15.00Current price is: $15.00.
Original price was: $87.00.$43.00Current price is: $43.00.
Original price was: $169.00.$84.00Current price is: $84.00.